[China Instrument Network Instrument R&D] According to reports, recently, the US Army Research Laboratory (ARL) invested US$1.1 million in cooperation with Raytheon to jointly develop a scalable, mobile, and multi-generation radar project (NGR) for the US Army. Pattern radar front end (abbreviated SAMFET).
As part of the two-year cooperative research agreement in the US Army Research Laboratory Advanced RF Technology Project, Raytheon will jointly develop and validate modular building blocks that can be easily integrated into next-generation radar systems with Army Research Laboratories.
The new-generation radar project will improve the performance of air defense, anti-rocket and mortar systems that rely heavily on radars, especially portable, on-vehicle and airborne portable radar devices. Raytheon will collaborate with the Army Research Laboratory to explore new ways of designing and manufacturing modular components that will integrate into the open architecture of next-generation radars, providing processing flexibility, mobility, and efficiency across the entire radar band.
Colin Whelan, Raytheon’s vice president of advanced technology, said: “Raytheon’s long-standing reputation for applying radar technology innovation has enabled us to play a key role in the development of the US Army’s next-generation radar system. Our team will work with the US Army Research Laboratory. Together, using Raytheon's massive investment in niobium nitride technology and its deep expertise as a pioneer in this field, it will significantly increase the performance of the U.S. military's next-generation radar, allowing the U.S. military to take the lead in the next few years."
Raytheon's efforts to mature the GaN technology for military applications earned it the highest level of defense in the defense industry for the Office of the Secretary of Defense-rated. Semiconductor materials can effectively amplify high-power signals in the microwave frequency band. Gallium nitride can make next-generation radars five times more powerful than previous semiconductor technology radars and will not overheat. Raytheon's GaN components cost only one-third the cost per watt of RF compared to gallium arsenide alternatives, and provide higher power density and efficiency, and proven average time between failures. 100 million hours. This will enable next-generation radars to provide higher performance efficiently and economically.
(Original title: U.S. Army funds Raytheon to develop GaN technology for next-generation radar applications)
As part of the two-year cooperative research agreement in the US Army Research Laboratory Advanced RF Technology Project, Raytheon will jointly develop and validate modular building blocks that can be easily integrated into next-generation radar systems with Army Research Laboratories.
The new-generation radar project will improve the performance of air defense, anti-rocket and mortar systems that rely heavily on radars, especially portable, on-vehicle and airborne portable radar devices. Raytheon will collaborate with the Army Research Laboratory to explore new ways of designing and manufacturing modular components that will integrate into the open architecture of next-generation radars, providing processing flexibility, mobility, and efficiency across the entire radar band.
Colin Whelan, Raytheon’s vice president of advanced technology, said: “Raytheon’s long-standing reputation for applying radar technology innovation has enabled us to play a key role in the development of the US Army’s next-generation radar system. Our team will work with the US Army Research Laboratory. Together, using Raytheon's massive investment in niobium nitride technology and its deep expertise as a pioneer in this field, it will significantly increase the performance of the U.S. military's next-generation radar, allowing the U.S. military to take the lead in the next few years."
Raytheon's efforts to mature the GaN technology for military applications earned it the highest level of defense in the defense industry for the Office of the Secretary of Defense-rated. Semiconductor materials can effectively amplify high-power signals in the microwave frequency band. Gallium nitride can make next-generation radars five times more powerful than previous semiconductor technology radars and will not overheat. Raytheon's GaN components cost only one-third the cost per watt of RF compared to gallium arsenide alternatives, and provide higher power density and efficiency, and proven average time between failures. 100 million hours. This will enable next-generation radars to provide higher performance efficiently and economically.
(Original title: U.S. Army funds Raytheon to develop GaN technology for next-generation radar applications)
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